A novel detection system for defects and chemical contamination in semiconductors based upon the Scanning Kelvin Probe

Surface Science

Volumn 433-435, Issue , 1999, Pages 622-626

  Lagel B ^a   Baikie, I D ^a   Petermann, U ^a  

^a ROBERT GORDON UNIVERSITY   (United Kingdom)

Author keywords

Iron; Kelvin probe; Silicon; Surface photovoltage; Work function

Indexed keywords

CHARGE CARRIERS; CRYSTAL DEFECTS; CRYSTAL IMPURITIES; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON ENERGY LEVELS; IRON; OPTICAL RESOLVING POWER; OXIDATION; OXIDES; SCANNING; SILICON WAFERS; SURFACE TOPOGRAPHY;

CHEMICAL CONTAMINATION; SCANNING KELVIN PROBE; SURFACE CHARGE; SURFACE PHOTOVOLTAGE; SURFACE POTENTIAL; WORK FUNCTION;

SEMICONDUCTOR MATERIALS;

EID: 0043259589     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(99)00025-4     Document Type: Article

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