Doping of ternary compounds CdGeAs2 and CdSnAs2 by impurities of I, II and III groups

Journal of Physics and Chemistry of Solids

Volumn 64, Issue 9-10, 2003, Pages 1755-1760

  Voevodin, Valeriy G ^a   Bereznaja, Svetlana A ^a   Voevodina, Olga V ^a   Korotchenko, Zoya V ^a   Fernelius, Nils C ^b   Ohmer, Melvin C ^b   Goldstein, Jonathan T ^b  

^a TOMSK STATE UNIVERSITY   (Russian Federation)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

B. Crystal growth

Indexed keywords

CRYSTAL GROWTH; CRYSTAL STRUCTURE; CRYSTALS; DOPING (ADDITIVES); NONLINEAR OPTICS; RECRYSTALLIZATION (METALLURGY); SYNTHESIS (CHEMICAL); TERNARY SYSTEMS;

TERNARY COMPOUNDS;

CADMIUM COMPOUNDS;

EID: 0043239156     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3697(03)00104-5     Document Type: Conference Paper

References (1)

1. Gubenko A.Y. Oscillating influence of impurities concentration on properties of semiconductors and its nature. Materials of Electronic Engineering (Rus). 1:1998;20-26.