An improved GaAs device model for the simulation of analog integrated circuit

IEEE Transactions on Electron Devices

Volumn 50, Issue 5, 2003, Pages 1194-1199

  Matsunaga, Nobutoshi ^a   Yamamoto, Masahiko ^a   Hatta, Yasushi ^a   Masuda, Hiroo ^a  

^a HITACHI LTD   (Japan)

Author keywords

Device model; Drain lag; Equivalent circuit; Frequency dispersion; GaAs; HFET; MESFET

Indexed keywords

CAPACITANCE; COMPUTER SIMULATION; ELECTRIC CURRENTS; EQUIVALENT CIRCUITS; FIELD EFFECT TRANSISTORS; HETEROJUNCTIONS; INTEGRATED CIRCUIT LAYOUT; MESFET DEVICES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; TRANSCONDUCTANCE;

ANALOG INTEGRATED CIRCUIT; FREQUENCY DISPERSION;

LINEAR INTEGRATED CIRCUITS;

EID: 0043175239     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.813234     Document Type: Article

References (6)

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