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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 3, 1998, Pages 1401-1403

AlGaAs/GaAs Npn heterojunction bipolar transistors grown on Si (311) by molecular beam epitaxy

(5) Jurkovic, M J a Alperin, J a Du, Q a Wang, W I a Chang, M F b

a Fu Foundation School of Engineering and Applied Science (United States)

b ROCKWELL SCIENCE CENTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0043102170 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.590228 Document Type: Article

Times cited : (4)

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