Numerical analysis of field-effect surface passivation for solar cells

Solar Energy Materials and Solar Cells

Volumn 44, Issue 1, 1996, Pages 79-98

  Ohtsuka, H ^a   Uematsu, T ^a   Warabisako, T ^a  

^a HITACHI LTD   (Japan)

Author keywords

Electron hole recombination; Passivation; Semiconductor device models; Silicon; Solar cells

Indexed keywords

COMPOSITION EFFECTS; COMPUTER SIMULATION; ELECTRIC CONDUCTIVITY OF SOLIDS; NUMERICAL ANALYSIS; PASSIVATION; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SURFACE PROPERTIES;

BACK CONTACT TYPE SILICON CELLS; ELECTRON HOLE RECOMBINATION; FIELD EFFECT SURFACE PASSIVATION; INVERSION LAYERS; RESISTIVITY EFFECTS; SURFACE ELECTRICAL POTENTIAL; SURFACE RECOMBINATION VELOCITY;

SILICON SOLAR CELLS;

EID: 0043041113     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0927-0248(96)00035-9     Document Type: Article

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