The impact of incident angle on multiple-bit upset in SRAMs

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 209, Issue , 2003, Pages 367-370

  Zhang, Q X ^a   Hou, M D ^a   Liu, J ^a   Wang, Z G ^a   Jin, Y F ^a   Zhu, Z Y ^a   Sun, Y M ^a  

^a INSTITUTE OF MODERN PHYSICS   (China)

Author keywords

Angular effect; Energy deposited; Lateral distribution; Multiple bit upset; Static random access memory

Indexed keywords

ARGON; SCINTILLATION; SPACECRAFT; STATIC RANDOM ACCESS STORAGE;

ANGULAR EFFECTS;

HEAVY IONS;

EID: 0043032529     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(02)02026-8     Document Type: Conference Paper

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