Multiple ion implantation profile using differential channel dose

IEEE Transactions on Electron Devices

Volumn 50, Issue 7, 2003, Pages 1701-1705

  Suzuki, Kunihiro ^a   Tashiro, Hiroko ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

As; B; Ion implantation; Multiple

Indexed keywords

COMPUTER SIMULATION; ION IMPLANTATION; SEMICONDUCTOR JUNCTIONS;

CHANNEL EFFECTS;

MOSFET DEVICES;

EID: 0043028311     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.814979     Document Type: Article

References (8)

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5. K. Suzuki, R. Sudo, and T. Feudel, "Simple analytical expression for dose dependent ion-implanted Sb profiles using a jointed half Gaussian and one with an exponential tail," Solid-State Electron., vol. 41, pp. 1903-1911, 1997.
6. K. Suzuki, R. Sudo, Y. Tada, M. Tomotani, T. Feudel, and W. Fichtner, "Comprehensive analytical expression for dose dependent ion-implanted impurity concentration profiles," Solid-State Electron., vol. 42, pp. 1671-1678, 1998.
7. K. Suzuki and R. Sudo, "Analytical expression for ion-implanted impurity concentration profiles," Solid-State Electron., vol. 44, pp. 2253-2257, 2001.
8. Medici User's Manual, Avant!, 2000.