Electric-field-induced reversible avalanche breakdown in a GaAs microcrystal due to cross band gap impact ionization

Applied Physics Letters

Volumn 83, Issue 4, 2003, Pages 704-706

  Klappenberger, F ^a   Renk, K F ^a   Summer, R ^a   Keldysh, L ^a,c   Rieder, B ^a   Wegscheider, W ^b  

^a UNIVERSITY OF REGENSBURG   (Germany)

^b WALTER SCHOTTKY INSTITUT   (Germany)

^c LEBEDEV PHYSICAL INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC CONTACTS; ELECTRIC SWITCHES; ELECTRON ENERGY LEVELS; GUNN EFFECT; HYSTERESIS; IONIZATION; SEMICONDUCTING GALLIUM ARSENIDE;

AVALANCHE BREAKDOWN;

CRYSTALS;

EID: 0043014807     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1595712     Document Type: Article

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