-
1
-
-
0032643199
-
3 on Si from thermally oxidized AlAs and Al
-
3 on Si from thermally oxidized AlAs and Al [J]. J. Crystal Growth, 1999, 201/202: 652-655.
-
(1999)
J. Crystal Growth
, vol.201-202
, pp. 652-655
-
-
Liao, C.C.1
Chin, A.2
Tsai, C.3
-
2
-
-
0035410899
-
2 films on Si (100) substrate and its electrical properties
-
Chinese source
-
2 films on Si (100) substrate and its electrical properties [J]. Chinese J. Semiconductors, 2001, 22(7): 865-870 (in Chinese)
-
(2001)
Chinese J. Semiconductors
, vol.22
, Issue.7
, pp. 865-870
-
-
Tang, J.1
Liu, X.2
Wang, W.3
-
3
-
-
0036004655
-
2 thin films deposited on silicon by high vacuum electron beam evaporation
-
2 thin films deposited on silicon by high vacuum electron beam evaporation [J]. Chin. Phys. Lett., 2002, 19(3): 395-397.
-
(2002)
Chin. Phys. Lett.
, vol.19
, Issue.3
, pp. 395-397
-
-
Zhang, N.1
Wan, Q.2
Song, Z.3
-
4
-
-
0033342871
-
High-K gate dielectrics
-
Wen-Jie Qi, Byoung Hun Lee, Renee Nieh et al.. High-K Gate Dielectrics [C]. California: Part of the SPIE Conference on Microelectronic Device Technology III Santa Clara, California, 1999, 3881(9): 24-32.
-
(1999)
California: Part of the SPIE Conference on Microelectronic Device Technology III Santa Clara
, vol.3881
, Issue.9
, pp. 24-32
-
-
Qi, W.-J.1
Lee, B.H.2
Nieh, R.3
-
6
-
-
0000780316
-
Ultrathin zirconium silicate thin film with good thermal stability for alternative gate dielectric application
-
Wen-jie Qi, Renee Nieh, Byoung Hun Lee et al.. Ultrathin zirconium silicate thin film with good thermal stability for alternative gate dielectric application [J]. Appl. Phys. Lett., 2000, 77(11): 1704-1706.
-
(2000)
Appl. Phys. Lett.
, vol.77
, Issue.11
, pp. 1704-1706
-
-
Qi, W.-J.1
Nieh, R.2
Lee, B.H.3
-
7
-
-
0031547392
-
Epitaxial growth of zirconium dioxide films on sapphire substrates
-
H. Asaoka, Y. Katano, K. Noda. Epitaxial growth of zirconium dioxide films on sapphire substrates [J]. Applied Surface Science, 1997, 113/114: 198-201.
-
(1997)
Applied Surface Science
, vol.113-114
, pp. 198-201
-
-
Asaoka, H.1
Katano, Y.2
Noda, K.3
-
8
-
-
0001459359
-
2 films prepared by chemical vapor deposition on Si(100)
-
2 films prepared by chemical vapor deposition on Si(100) [J]. Appl. Phys. Lett., 2001, 78(3): 368-370.
-
(2001)
Appl. Phys. Lett.
, vol.78
, Issue.3
, pp. 368-370
-
-
Jeon, T.S.1
White, J.M.2
Kwoong, D.L.3
-
9
-
-
0034333889
-
Properties of zirconia films dispersed with PbS nanoparticles
-
Weimin Huang, Jianlin Shi. Properties of zirconia films dispersed with PbS nanoparticles [J]. J. Mater. Res., 2000, 15(11): 2343-2346.
-
(2000)
J. Mater. Res
, vol.15
, Issue.11
, pp. 2343-2346
-
-
Huang, W.1
Shi, J.2
-
10
-
-
0032072310
-
Pulsed laser deposition of polycrystalline zirconia thin films
-
F. Hanus, L.D. Laude. Pulsed laser deposition of polycrystalline zirconia thin films [J]. Applied Surface Science, 1998, 127-129: 544-548.
-
(1998)
Applied Surface Science
, vol.127-129
, pp. 544-548
-
-
Hanus, F.1
Laude, L.D.2
-
11
-
-
0035284650
-
Preparation of aluminum nitride films using pulsed laser deposition
-
Chinese source
-
Ling Hao, Shi Wei, Sun Jian et al.. Preparation of aluminum nitride films using pulsed laser deposition [J]. Chinese J. Lasers, 2001, A28(3): 272-274 (in Chinese)
-
(2001)
Chinese J. Lasers
, vol.A28
, Issue.3
, pp. 272-274
-
-
Hao, L.1
Wei, S.2
Jian, S.3
-
12
-
-
0042914908
-
The role of spreading resistance profiling in manufacturing control and technology development
-
J. Lin-Kwang, S. Ramey, J.M. Reynes et al.. The role of spreading resistance profiling in manufacturing control and technology development [J]. Microelectronics Reliability, 2000, 40: 1497-1502.
-
(2000)
Microelectronics Reliability
, vol.40
, pp. 1497-1502
-
-
Lin-Kwang, J.1
Ramey, S.2
Reynes, J.M.3
-
14
-
-
0033600230
-
The eletronic structure at the atomic scale of ultrathin gate oxides
-
D.A. Muller, T. Sorsch, S. Moccio et al.. The eletronic structure at the atomic scale of ultrathin gate oxides [J]. Nature, 1999, 399: 758-761.
-
(1999)
Nature
, vol.399
, pp. 758-761
-
-
Muller, D.A.1
Sorsch, T.2
Moccio, S.3
-
15
-
-
0031140867
-
Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin oxide nMOSFETs
-
S.-H. Lo, D.A. Buchannan, Y. Taur et al.. Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin oxide nMOSFETs [J]. IEEE Electron Device Lett., 1997, 18: 209.
-
(1997)
IEEE Electron Device Lett.
, vol.18
, pp. 209
-
-
Lo, S.-H.1
Buchannan, D.A.2
Taur, Y.3
-
16
-
-
0035498698
-
Multi-component high-K gate dielectric for the silicon industry
-
L. Manchanda, M.D. Morris, M.L. Green et al. Multi-component high-K gate dielectric for the silicon industry [J]. Microelectronic Engineering, 2001, 59: 351-359.
-
(2001)
Microelectronic Engineering
, vol.59
, pp. 351-359
-
-
Manchanda, L.1
Morris, M.D.2
Green, M.L.3
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