메뉴 건너뛰기




Volumn 30, Issue 4, 2003, Pages 345-348

Investigations on the relations between crystal structure and electrical properties of ZrO2 thin films

Author keywords

Crystal structure; Electrical property; PLD; Substrate temperature; Thin film physics; ZrO2 thin film

Indexed keywords

CRYSTAL STRUCTURE; DEPOSITION; DIFFRACTION; SUBSTRATES;

EID: 0042967439     PISSN: 02587025     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (7)

References (16)
  • 1
    • 0032643199 scopus 로고    scopus 로고
    • 3 on Si from thermally oxidized AlAs and Al
    • 3 on Si from thermally oxidized AlAs and Al [J]. J. Crystal Growth, 1999, 201/202: 652-655.
    • (1999) J. Crystal Growth , vol.201-202 , pp. 652-655
    • Liao, C.C.1    Chin, A.2    Tsai, C.3
  • 2
    • 0035410899 scopus 로고    scopus 로고
    • 2 films on Si (100) substrate and its electrical properties
    • Chinese source
    • 2 films on Si (100) substrate and its electrical properties [J]. Chinese J. Semiconductors, 2001, 22(7): 865-870 (in Chinese)
    • (2001) Chinese J. Semiconductors , vol.22 , Issue.7 , pp. 865-870
    • Tang, J.1    Liu, X.2    Wang, W.3
  • 3
    • 0036004655 scopus 로고    scopus 로고
    • 2 thin films deposited on silicon by high vacuum electron beam evaporation
    • 2 thin films deposited on silicon by high vacuum electron beam evaporation [J]. Chin. Phys. Lett., 2002, 19(3): 395-397.
    • (2002) Chin. Phys. Lett. , vol.19 , Issue.3 , pp. 395-397
    • Zhang, N.1    Wan, Q.2    Song, Z.3
  • 6
    • 0000780316 scopus 로고    scopus 로고
    • Ultrathin zirconium silicate thin film with good thermal stability for alternative gate dielectric application
    • Wen-jie Qi, Renee Nieh, Byoung Hun Lee et al.. Ultrathin zirconium silicate thin film with good thermal stability for alternative gate dielectric application [J]. Appl. Phys. Lett., 2000, 77(11): 1704-1706.
    • (2000) Appl. Phys. Lett. , vol.77 , Issue.11 , pp. 1704-1706
    • Qi, W.-J.1    Nieh, R.2    Lee, B.H.3
  • 7
    • 0031547392 scopus 로고    scopus 로고
    • Epitaxial growth of zirconium dioxide films on sapphire substrates
    • H. Asaoka, Y. Katano, K. Noda. Epitaxial growth of zirconium dioxide films on sapphire substrates [J]. Applied Surface Science, 1997, 113/114: 198-201.
    • (1997) Applied Surface Science , vol.113-114 , pp. 198-201
    • Asaoka, H.1    Katano, Y.2    Noda, K.3
  • 8
    • 0001459359 scopus 로고    scopus 로고
    • 2 films prepared by chemical vapor deposition on Si(100)
    • 2 films prepared by chemical vapor deposition on Si(100) [J]. Appl. Phys. Lett., 2001, 78(3): 368-370.
    • (2001) Appl. Phys. Lett. , vol.78 , Issue.3 , pp. 368-370
    • Jeon, T.S.1    White, J.M.2    Kwoong, D.L.3
  • 9
    • 0034333889 scopus 로고    scopus 로고
    • Properties of zirconia films dispersed with PbS nanoparticles
    • Weimin Huang, Jianlin Shi. Properties of zirconia films dispersed with PbS nanoparticles [J]. J. Mater. Res., 2000, 15(11): 2343-2346.
    • (2000) J. Mater. Res , vol.15 , Issue.11 , pp. 2343-2346
    • Huang, W.1    Shi, J.2
  • 10
    • 0032072310 scopus 로고    scopus 로고
    • Pulsed laser deposition of polycrystalline zirconia thin films
    • F. Hanus, L.D. Laude. Pulsed laser deposition of polycrystalline zirconia thin films [J]. Applied Surface Science, 1998, 127-129: 544-548.
    • (1998) Applied Surface Science , vol.127-129 , pp. 544-548
    • Hanus, F.1    Laude, L.D.2
  • 11
    • 0035284650 scopus 로고    scopus 로고
    • Preparation of aluminum nitride films using pulsed laser deposition
    • Chinese source
    • Ling Hao, Shi Wei, Sun Jian et al.. Preparation of aluminum nitride films using pulsed laser deposition [J]. Chinese J. Lasers, 2001, A28(3): 272-274 (in Chinese)
    • (2001) Chinese J. Lasers , vol.A28 , Issue.3 , pp. 272-274
    • Hao, L.1    Wei, S.2    Jian, S.3
  • 12
    • 0042914908 scopus 로고    scopus 로고
    • The role of spreading resistance profiling in manufacturing control and technology development
    • J. Lin-Kwang, S. Ramey, J.M. Reynes et al.. The role of spreading resistance profiling in manufacturing control and technology development [J]. Microelectronics Reliability, 2000, 40: 1497-1502.
    • (2000) Microelectronics Reliability , vol.40 , pp. 1497-1502
    • Lin-Kwang, J.1    Ramey, S.2    Reynes, J.M.3
  • 14
    • 0033600230 scopus 로고    scopus 로고
    • The eletronic structure at the atomic scale of ultrathin gate oxides
    • D.A. Muller, T. Sorsch, S. Moccio et al.. The eletronic structure at the atomic scale of ultrathin gate oxides [J]. Nature, 1999, 399: 758-761.
    • (1999) Nature , vol.399 , pp. 758-761
    • Muller, D.A.1    Sorsch, T.2    Moccio, S.3
  • 15
    • 0031140867 scopus 로고    scopus 로고
    • Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin oxide nMOSFETs
    • S.-H. Lo, D.A. Buchannan, Y. Taur et al.. Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin oxide nMOSFETs [J]. IEEE Electron Device Lett., 1997, 18: 209.
    • (1997) IEEE Electron Device Lett. , vol.18 , pp. 209
    • Lo, S.-H.1    Buchannan, D.A.2    Taur, Y.3
  • 16
    • 0035498698 scopus 로고    scopus 로고
    • Multi-component high-K gate dielectric for the silicon industry
    • L. Manchanda, M.D. Morris, M.L. Green et al. Multi-component high-K gate dielectric for the silicon industry [J]. Microelectronic Engineering, 2001, 59: 351-359.
    • (2001) Microelectronic Engineering , vol.59 , pp. 351-359
    • Manchanda, L.1    Morris, M.D.2    Green, M.L.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.