Photoluminescence and Raman spectroscopy of Mg-doped GaN; As grown, hydrogen implanted and annealed

Materials Science and Engineering: B

Volumn 102, Issue 1-3, 2003, Pages 293-297

  Kunert, H W ^a   Brink, D J ^a   Auret, F D ^a   Maremane, M ^a   Prinsloo, L C ^a   Barnas, J ^b   Beaumont, B ^c   Gibart, P ^c  

^a UNIVERSITY OF PRETORIA   (South Africa)

^b ADAM MICKIEWICZ UNIVERSITY   (Poland)

^c CRHEA CNRS   (France)

Author keywords

GaN; Ion implantation; Photoluminescence; Raman spectroscopy; Semiconductors

Indexed keywords

ANNEALING; DOPING (ADDITIVES); GROWTH (MATERIALS); HYDROGEN; ION IMPLANTATION; LIGHT EMISSION; MAGNESIUM PRINTING PLATES; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY;

OPTICAL TRANSITIONS;

GALLIUM NITRIDE;

EID: 0042932669     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(02)00725-0     Document Type: Conference Paper

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