Fabrication and magnetotransport properties of nanoscaled MnSb dots

Journal of Applied Physics

Volumn 87, Issue 9 II, 2000, Pages 5639-5641

  Mizuguchi, M ^a,b   Akinaga, H ^a,c   Ono, K ^b   Oshima, M ^b  

^a NATL INST FOR ADV INTERDISC RES   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0042927088     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.372475     Document Type: Article

References (7)

1. S. Y. Chou, P. R. Krauss, and L. Kong, J. Appl. Phys. 79, 6101 (1996).
2. S. M. Jordan, R. Schad, A. M. Keen, M. Bischoff, D. S. Sehmool, and H. van Kempen, Phys. Rev. E 59, 7350 (1999).
3. H. Takeshita, Y. Suzuki, H. Akinaga, W. Mizutani, K. Tanaka, T. Katayama, and A. Itoh, Appl. Phys. Lett. 68, 3040 (1996).
4. N. Koguchi and K. Ishige, Jpn. J. Appl. Phys. 32, 2052 (1993).
5. M. Oshima, Y. Watanabe, M. Sugiyama, and S. Heun, J. Electron Spectrosc. Relat. Phenom. 80, 129 (1996).
6. The nominal thickness of MnSb means the hypothetical thickness when the deposited atoms form the uniform MnSb thin film on the substrate.
7. In case the MnSb thin film is grown on GaAs (001) GaAs, the epitaxial relationship is MnSb (1-101)/GaAs (001), where the c-axis of MnSb becomes the magnetic hard axis. S. Miyanishi, H. Akinaga, and K. Tanaka, Appl. Phys. Lett. 68, 2890 (1996).