The p(4×2) surface reconstruction on epitaxial WO3 thin films

Surface Science

Volumn 542, Issue 1-2, 2003, Pages 22-32

  Li, M ^a   Altman, E I ^a   Posadas, A ^a   Ahn, C H ^a  

^a Yale University   (United States)

Author keywords

Epitaxy; Scanning tunneling microscopy; Surface relaxation and reconstruction; Tungsten oxide

Indexed keywords

ANNEALING; EPITAXIAL GROWTH; LOW ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; THIN FILMS; TUNGSTEN COMPOUNDS; ULTRAHIGH VACUUM;

SURFACE RECONSTRUCTION;

SURFACE REACTIONS;

EID: 0042890518     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(03)00986-5     Document Type: Article

References (33)

1. Akiyama M., Zhang Z., Tamaki J., Miura N., Yamazoe N. Sens. Actuators B. 13-14:1993;619.
2. Madou M.J., Morrison S.R. Chemical Sensing with Solid State Devices. 1989;Oxford University Press, Oxford.
3. Cotton F.A., Wilkinson G. Advances in Organic Chemistry. 1988;Wiley, New York.
4. Svensson J.S.E.M., Granqvist C.G. Sol. Energy Mater. 11:1984;29.
5. Green M. Electrochromism and Electrochromic Displays. 1982;University of Rome, Italy.
6. Lambert T. Sol. Energy Mater. 11:1984;1.
7. Svenson J., Granqvist C. Appl. Phys. Lett. 45:1984;828.
8. Henrich V.E., Cox P.A. The Surface Science of Metal Oxides. 1994;Cambridge University Press, Cambridge.
9. Sundberg M., Tilley R.J.D. J. Solid State Chem. 11:1974;150.
10. Tanner R.E., Altman E.I. J. Vac. Sci. Technol. A. 19:2001;1502.
11. Tanner R.E., Meethunkij P., Altman E.I. J. Phys. Chem. B. 104:2000;12315.
12. Tanisaki S. J. Phys. Soc. Jpn. 15:1960;573.
13. Loopstra B.O., Boldrini P. Acta Crystallogr. 1:1967;1948.
14. Salje E. Acta Cryst. B. 33:1977;574.
15. Woodward P.M., Sleight A.W., Vogt T. J. Phys. Chem. Solids. 56:1995;1305.
16. Dixon R.A., Williams J.J., Morris D., Rebane J., Jones F.H., Egdell R.G., Downes S.W. Surf. Sci. 399:1998;199.
17. Jones F.H., Rawlings K., Foord J.S., Cox P.A., Egdell R.G., Pethica J.B., Wanklyn B.M.R. Phys. Rev. B. 52:1995;14392.
18. Jones F.H., Rawlings K., Foord J.S., Egdell R.G., Pethica J.B., Wanklyn B.M.R., Parker S.C., Oliver P.M. Surf. Sci. 359:1996;107.
19. Jones F.H., Dixon R.A., Brown A. Surf. Sci. 369:1996;343.
20. Nakakura C.Y., Phanse V.M., Zheng G., Bannon G., Altman E.I., Lee K.P. Rev. Sci. Instrum. 69:1998;3251.
21. Hamnett A., Goodenough J.B. Madelung O. Semiconductors. vol. 17g:1984;Springer, Berlin.
22. Langell M.A., Bernasek S.L. J. Vac. Sci. Technol. 17:1980;1296.
23. Avery N.R. Surf. Sci. 41:1974;533.
24. Bullett D.W. J. Phys. C: Solid State Phys. 16:1983;2197.
25. Herman G.S., Sievers M.R., Gao Y. Phys. Rev. Lett. 84:2000;3354.
26. Tanner R.E., Liang Y., Altman E.I. Surf. Sci. 506:2002;251.
27. Liang Y., Gan S., Chambers S.A., Altman E.I. Phys. Rev. B. 63:2001;235402.
28. Lazzeri M., Selloni A. Phys. Rev. Lett. 87:2001;266105.
29. Putna E.S., Vohs J.M., Gorte R.J. J. Phys. Chem. 100:1996;17862.
30. Li M., Hebenstreit W., Gross L., Diebold U., Henderson M.A., Jennison D.R., Schultz P.A., Sears M.P. Surf. Sci. 437:1999;173.
31. Onishi H., Iwasawa Y. Phys. Rev. Lett. 76:1996;791.
32. Kosuge K. Chemistry of Non-Stoichiometric Compounds. 1994;Oxford University Press, Oxford.
33. Barteau M.A. Chem. Rev. 96:1996;1413.