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Volumn 54, Issue 19, 1996, Pages 13413-13415

Phonon shifts relating to the defect structure in neutron-transmutation-doped semi-insulating GaAs

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EID: 0042889627     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.54.13413     Document Type: Article
Times cited : (8)

References (13)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.