GaAs pHEMT-based technology for microwave applications in a volume MMIC production environment on 150-mm wafers

IEEE Transactions on Semiconductor Manufacturing

Volumn 16, Issue 3, 2003, Pages 376-383

  O'Keefe, Matthew F ^a   Atherton, John S ^a   Bösch, Wolfgang ^b   Burgess, Paul ^a   Cameron, Nigel I ^a   Snowden, Christopher M ^b  

^a Newton Aycliffe Co   (United Kingdom)

^b Filtronic Plc   (United Kingdom)

Author keywords

150 mm; GaAs; pHEMT

Indexed keywords

COST EFFECTIVENESS; HIGH ELECTRON MOBILITY TRANSISTORS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; NATURAL FREQUENCIES; SCATTERING PARAMETERS; SEMICONDUCTING GALLIUM ARSENIDE; SPURIOUS SIGNAL NOISE;

HIGH-YIELD PRODUCTION; NOISE PARAMETER; SCALAR MEASUREMENT; VECTOR MEASUREMENT;

INTEGRATED CIRCUIT MANUFACTURE;

EID: 0042887687     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/TSM.2003.815631     Document Type: Article

References (5)

1. M. F. O'Keefe, J. S. Atherton, Y. Zhou, J. G. E. Mayock, and W. Bösch, "GaAs MMIC production on 150mm wafers," in ARMMS, Bracknell, U.K., Nov. 12-13, 2001.
2. J. D. Rhodes, "Components and circuits for mobile communication systems," in Eur. Microwave Conf., London, U.K., Sept. 25-27, 2001.
3. M. F. O'Keefe, J. S. Atherton, M. D. Burnham, M. C. Clausen, J. M. Cullen, R. G. Davis, R. Grey, R. A. Miller, G. Murdoch, R. G. Peall, C. C. Phillips, M. Scott, and C. M. Snowden, "Manufacturable microwave power FET technology," in Proc. CS_MAX, 2002, pp. 1-3.
4. O. Berger, "GaAs MESFET, HEMT and HBT competition with advanced Si RF technologies," in Proc. GaAs MANTECH, 1999, pp. 7-10.
5. P. Sandhiya, W. Bösch, and M. F. O'Keefe, "Handset power amplifiers using enhancement mode GaAs pHEMTs," in Proc. GAAS-2001, p. 545.