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Volumn 42, Issue 6 A, 2003, Pages 3438-3441
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Simulation of writing and erasing processes of GeSbTe and GeSbTeSn with GeN interlayers in the case of dual-level DVR discs
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Author keywords
Computer simulation; GeN interlayers; GeSbTeSn; Heterogeneous nucleation; TEM
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Indexed keywords
COMPUTER SIMULATION;
CRYSTAL GROWTH;
MATHEMATICAL MODELS;
NUCLEATION;
OPTICAL DISK STORAGE;
OPTICAL PROPERTIES;
PHASE TRANSITIONS;
REACTION KINETICS;
THERMODYNAMIC PROPERTIES;
TRANSMISSION ELECTRON MICROSCOPY;
VIDEO RECORDING;
DIGITAL VIDEO RECORDER;
GERMANIUM ANTIMONY TELLURIDE ALLOYS;
GERMANIUM ANTIMONY TELLURIUM TIN ALLOYS;
GERMANIUM NITRIDE;
INTERLAYERS;
SEMICONDUCTING GERMANIUM COMPOUNDS;
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EID: 0042882745
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.42.3438 Document Type: Article |
Times cited : (4)
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References (10)
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