Some investigations on HF-CVD diamond using scanning tunneling microscopy

Materials Science and Engineering B

Volumn 41, Issue 2, 1996, Pages 267-272

  Sumant, A V ^a   Dharmadhikari, C V ^a   Godbole, V P ^a  

^a UNIVERSITY OF PUNE   (India)

Author keywords

Diamond films; Scanning tunneling microscopy; Tungsten carbide

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; DISLOCATIONS (CRYSTALS); ELECTRIC CURRENT MEASUREMENT; FILM GROWTH; IMAGE ANALYSIS; MORPHOLOGY; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SCANNING TUNNELING MICROSCOPY; TUNGSTEN CARBIDE; X RAY CRYSTALLOGRAPHY;

HOT FILAMENT CHEMICAL VAPOR DEPOSITION (HFCVD); SCREW DISLOCATIONS;

DIAMOND FILMS;

EID: 0042878824     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01660-1     Document Type: Article

References (29)

1. K.E. Spear, J. Am. Ceram. Soc., 72 (2) (1989) 171.
2. J.C. Angus, Y Wang and M. Sunkara, Ann. Rev. Mater. Sci., 21 (1991) 221.
3. R.F. Davis (ed.), Diamond Films and Coatings, Materials Science and Process Technology Series, Noyes Publications, New Jersey, 1993.
4. B.V. Spitsyn, in D.T. Hurle (ed.), Handbook of Crystal Growth, Vol. 3, Elsevier, Amsterdam, 1994.
5. J.E. Butler and R.L. Woodin, Phil. Trans. R. Soc. Lond. A, 342 (1993) 209.
6. W.A. Yarbrough and R. Messier, Science, 24 (1990) 688.
7. G. Binning, H. Rohrer, Ch. Gerber and E. Weibel, Appl. Phys. Lett, 40 (1982) 178; Appl. Phys. Lett., 49 (1982) 57; Appl. Phys. Lett., 50 (1993) 120.
8. G. Binning, H. Rohrer, Ch. Gerber and E. Weibel, Appl. Phys. Lett, 40 (1982) 178; Appl. Phys. Lett., 49 (1982) 57; Appl. Phys. Lett., 50 (1993) 120.
9. G. Binning, H. Rohrer, Ch. Gerber and E. Weibel, Appl. Phys. Lett, 40 (1982) 178; Appl. Phys. Lett., 49 (1982) 57; Appl. Phys. Lett., 50 (1993) 120.
10. R.E. Stallcup, A.F. Aviles and J.M. Perez, Appl. Phys. Lett., 66 (18) (1995) 2331.
11. J. Narayan, V.P. Godbole, G. Matera and R.K. Singh, J. Appl. Phys., 2 (1992) 966
12. A.A. Gorbunov and S.M. Pimenov, Phys. Stat. Sol. A, 145 (1994) 393.
13. W.J. Kaiser and R.C. Jaklevic, Surf. Sci., 181 (1987) 55.
14. G. Binning and D.P.E. Smith, Rev. Sci. Instrum., 57 (1986) 1688.
15. C.V. Dharmadhikari, Presented at 41st Int. Field Emission Symp. IFES. July 11-15, Rouen, France, 1994. (To be published).
16. A.J. Melmed, J. Vac. Sci. Tech., 9 (2) (1991) 601.
17. L.A. Hockett amd S. Creager, Rev. Sci. Instrum., 64 (1) (1993) 263.
18. J.F. Jorgerzen, K. Carneiro and L. Madsen, Nanotechnology, 10 (1994) 152.
19. C.V. Dharmadhikari, S.M. Patil and S.B. Iyyer, Presented at 42nd Int. Field Emission Symp., IFES. Aug 6-11, Madison, WI, USA, 1995. (To be published).
20. T.Z. Kreutz, R.E. Clausing, L. Heatherly, R.J. Warmack, T. Thundat, C.S. Figerle and K. Wandelt, Phys. Rev. B, 51 (20) (1995) 14554.
21. K.F. Turner and J.T. Glass, J. Appl. Phys., 69 (9) (1991) 6400.
22. Ch. Wild, N. Herres and P. Koidi, J. Appl. Phys., 68 (3) (1990) 973.
23. J. Narayan, J. Mater. Res., 5 (11) (1990) 2414.
24. G. Busmann, H. Sprang and I.V. Hertel, Appl. Phys. Lett., 59 (3) (1991) 295.
25. Y. Kuk and P.J. Silverman, Rev. Sci. Instrum., 160 (1989) 165.
26. J.J. Saenz and R. Garcia, Appl., Phys. Lett., 65 (23) (1994) 3022.
27. P.H. Huang and N.M. Cuttler, Appl. Phys. Lett., 65 (20) (1994) 2562.
28. R. Gomer, Field Emission and Field Ionization, Harvard University Press, NY, USA, 1961.
29. N.S. Xu, R.V. Latham and Y. Tzeng, Elect. Lett., 29 (18) (1993) 1596.