Direct condensation modelling for a two-particle growth system: Application to GaAs grown by hydride vapour phase epitaxy

Journal of Crystal Growth

Volumn 258, Issue 1-2, 2003, Pages 14-25

  Gil Lafon, E ^a   Napierala, J ^a   Pimpinelli, A ^a   Cadoret, R ^a   Trassoudaine, A ^a   Castelluci, D ^a  

^a UNIVERSITÉ BLAISE PASCAL   (France)

Author keywords

A1. Growth models; A3. Hydride vapour phase epitaxy; B2. Semiconducting gallium arsenide

Indexed keywords

ARSENIC COMPOUNDS; CONDENSATION; CRYSTAL STRUCTURE; REACTION KINETICS; SEMICONDUCTING GALLIUM ARSENIDE; SUPERSATURATION; SYNTHESIS (CHEMICAL);

HYDRIDE VAPOR PHASE EPITAXY (HVPE);

VAPOR PHASE EPITAXY;

EID: 0042832117     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(03)01311-3     Document Type: Article

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