Impurity effect on low-temperature polarisation of the charge-density-waves in o-TaS3

Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 251, Issue 5, 1999, Pages 340-345

  Baklanov, N I ^a   Zaitsev Zotov, S V ^a   Frolov, V V ^a   Monceau, P ^b  

^a RUSSIAN ACADEMY OF SCIENCES   (Russian Federation)

^b LABORATOIRE DE CRISTALLOGRAPHIE   (France)

Author keywords

Charge density waves; Creep; Dielectric relaxation; Glass transition; Pinning

Indexed keywords

ACTIVATION ENERGY; CHARGE DENSITY; CREEP; CRYSTAL IMPURITIES; DIELECTRIC RELAXATION; DOPING (ADDITIVES); GLASS TRANSITION; TEMPERATURE DISTRIBUTION;

CHARACTERISTIC TIME; DIELECTRIC ANOMALY; DIELECTRIC RESPONSE; DOPED CRYSTALS; IMPURITY EFFECT; LOW TEMPERATURES; PINNING; TEMPERATURE DEPENDENCE;

CHARGE DENSITY WAVES;

EID: 0042782223     PISSN: 03759601     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0375-9601(98)00911-6     Document Type: Article

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