Electron transport in low temperature grown GaAs

Materials Science and Engineering B

Volumn 44, Issue 1-3, 1997, Pages 334-336

  Khirouni, K ^a   Nagle, J ^b   Bourgoin, J C ^c  

^a FACULTÉ DES SCIENCES DE MONASTIR   (Tunisia)

^b FCA UNESP   (Brazil)

^c SORBONNE UNIVERSITÉ   (France)

Author keywords

Electron transport; Low temperature; Transmission electron microscopy

Indexed keywords

ACTIVATION ENERGY; CHARGE CARRIERS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRON TRANSPORT PROPERTIES; ENERGY GAP; PERCOLATION (SOLID STATE); SEMICONDUCTOR GROWTH; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

HOPPING PROCESS; IMPEDANCE SPECTROSCOPY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0042765123     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01794-1     Document Type: Article

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