Tris-diethylamino-silane decomposition due to tetrakis-diethylamido-hafnium in Hf1-xSixO2 chemical vapor deposition

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 42, Issue 6 A, 2003, Pages

  Ohshita, Yoshio ^a   Ogura, Atsushi ^b   Ishikawa, Masato ^c   Kada, Takeshi ^c   Machida, Hideaki ^c  

^a TOYOTA TECHNOLOGICAL INSTITUTE   (Japan)

^b NEC CORPORATION   (Japan)

^c TRI Chemical Laboratory Inc   (Japan)

Author keywords

Chemical vapor deposition (CVD); Dielectrics; Hafnium; Metal organic source; Metal oxide semiconductor (MOS) structure

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DECOMPOSITION; DIELECTRIC MATERIALS; HAFNIUM COMPOUNDS; MOS DEVICES; TEMPERATURE;

TETRAKIS DIETHYLAMIDO HAFNIUM; TRISDIETHYLAMINO SILANE DECOMPOSITION;

SILANES;

EID: 0042745451     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.l578     Document Type: Letter

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