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Volumn 47, Issue 11, 2003, Pages 2117-2125

Explicit current model for dual-gate MOSFET

Author keywords

Analytical model; Dual gate MOSFET; Modeling

Indexed keywords

APPROXIMATION THEORY; ELECTRIC CURRENTS; SIMULATORS;

EID: 0042730084     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(03)00164-3     Document Type: Article
Times cited : (2)

References (6)
  • 1
    • 0019567678 scopus 로고
    • Analysis and modeling of dual-gate MOSFETs
    • Barsan R.M. Analysis and modeling of dual-gate MOSFETs. IEEE Trans. Electron Dev. ED-28:1981;523-534.
    • (1981) IEEE Trans. Electron Dev. , vol.ED-28 , pp. 523-534
    • Barsan, R.M.1
  • 6
    • 0019022367 scopus 로고
    • Unified field-effect transistor theory including velocity saturation
    • Murphy B.T. Unified field-effect transistor theory including velocity saturation. IEEE J. Solid-State Circuits. SC-15:1980;325-327.
    • (1980) IEEE J. Solid-State Circuits , vol.SC-15 , pp. 325-327
    • Murphy, B.T.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.