Study of hydrogenated amorphous silicon thin films as a potential sensor for He-Ne laser light detection

Applied Surface Science

Volumn 218, Issue 1-4, 2003, Pages 44-53

  Ristova, M ^a,b   Kuo, Y ^a   Lee, H H ^a  

^a Department of Electrical and Computer Engineering   (United States)

^b SS CYRIL AND METHODIUS UNIVERSITY   (Macedonia)

Author keywords

a Si:H; Absorption coefficient; Amorphous silicon; He Ne laser

Indexed keywords

FOURIER TRANSFORM INFRARED SPECTROSCOPY; HELIUM; HYDROGENATION; LASER APPLICATIONS; LIGHT ABSORPTION; NEON; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SENSORS; SILICON WAFERS; THIN FILMS;

PHOTOSENSORS;

AMORPHOUS SILICON;

EID: 0042694797     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(03)00698-6     Document Type: Article

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