Aluminum bond-wire properties after 1 billion mechanical cycles

Microelectronics Reliability

Volumn 43, Issue 9-11, 2003, Pages 1833-1838

  Lefranc, G ^a   Weiss, B ^c   Klos, C ^b   Dick, J ^d   Khatibi, G ^c   Berg, H ^b  

^a SIEMENS AG   (Germany)

^b Eupec GmbH   (Germany)

^c UNIVERSITY OF VIENNA   (Austria)

^d WC Heraeus GmbH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; HIGH TEMPERATURE APPLICATIONS; INSULATED GATE BIPOLAR TRANSISTORS; SCANNING ELECTRON MICROSCOPY; THERMAL EXPANSION; THERMAL STRESS; THERMOMECHANICAL TREATMENT;

MECHANICAL CYCLES;

ELECTRIC WIRE;

EID: 0042694304     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(03)00312-3     Document Type: Conference Paper

References (11)

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6. Heraeus, data sheet
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