Organic vapor sensitivity in a porous silicon device

Sensors and Actuators, B: Chemical

Volumn 33, Issue 1-3, 1996, Pages 194-197

  Watanabe, Kazuhito ^a   Okada, Takumi ^a   Choe, Il Yong ^a   Sato, Yoichi ^a  

^a TOKAI UNIVERSITY   (Japan)

Author keywords

Chemical sensor; Current response; Organic vapor sensing; Porous silicon device

Indexed keywords

EID: 0042639087     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/0925-4005(96)80097-9     Document Type: Article

References (5)

1. M.B. Chohrin and A. Kurex, Adsorbate effects on photoluminescence and electrical conductivity of porous silicon, Appl. Phys. Lett., 64 (1994) 481-483.
2. A. Richter, Design considerations and performance of adsorptive humidity sensors with capacitive readout, 7th Int. Conf. Solid-State Sensors and Actuators, Transducers '93, Yokohama, Japan, 1993, pp. 310-313.
3. R.C. Anderson, R.S. Muller and C.W. Tobias, Investigations of porous silicon for vapor sensing, Sensors and Actuators A, 21-23 (1990) 835-839.
4. A. Motohashi, Electrical properties change of anodized silicon/crystal silicon sample by water vapor, Shingakuron, J77-C-II (1994) 213-222 (in Japanese).
5. A.S. Grove, Physics and Technology of Semiconductor Devices, Wiley, New York, 1967, Ch. 10, pp. 289-316.