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Volumn 68, Issue 1-3, 1998, Pages 359-364

Silicon active optical sensors: From functional photodetectors to smart sensors

Author keywords

Functional photodetectors; Silicon; SIS heterostructures

Indexed keywords

ETCHING; FABRICATION; HETEROJUNCTIONS; OPTICAL SENSORS; PHOTODETECTORS; SILICON WAFERS;

EID: 0042638115     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(98)00068-5     Document Type: Article
Times cited : (3)

References (10)
  • 1
    • 0018021455 scopus 로고
    • The reversely biased mis tunnelling Schottky barrier. Application to photodetection
    • G. Sarrabayrouse, J. Buxo, The reversely biased MIS tunnelling Schottky barrier. Application to photodetection, Phys. Stat. Solidi (a) 49 (1978) 603-608.
    • (1978) Phys. Stat. Solidi (A) , vol.49 , pp. 603-608
    • Sarrabayrouse, G.1    Buxo, J.2
  • 2
    • 0019621763 scopus 로고
    • Depletion widths of the Metal-Insulator Semiconductor (MIS) structure
    • C. Wei Jen, C. Len Lee, T. Fu Lei, Depletion widths of the metal-insulator semiconductor (MIS) structure, Solid-State Electron. 10 (1981) 949-954.
    • (1981) Solid-State Electron. , vol.10 , pp. 949-954
    • Jen, C.W.1    Lee, C.L.2    Lei, T.F.3
  • 4
    • 0000323143 scopus 로고
    • Multiplication effects in polysilicon MIS diodes
    • A. Adan, A. Sarmiento, R. Herrera, Multiplication effects in polysilicon MIS diodes, Solid-State Electron. 23 (1979) 515-516.
    • (1979) Solid-State Electron. , vol.23 , pp. 515-516
    • Adan, A.1    Sarmiento, A.2    Herrera, R.3
  • 5
    • 0041755169 scopus 로고
    • Mechanism of generation of electrical oscillations, of the amplification of a photocurrent, and of S-shaped current-voltage characteristics of semiconductor-insulator-semiconductor structures
    • A.I. Malik, V.A. Grechko, G.G. Grushka, Mechanism of generation of electrical oscillations, of the amplification of a photocurrent, and of S-shaped current-voltage characteristics of semiconductor-insulator-semiconductor structures, Sov. Phys. Semicond. 11 (1989) 1266-1270.
    • (1989) Sov. Phys. Semicond. , vol.11 , pp. 1266-1270
    • Malik, A.I.1    Grechko, V.A.2    Grushka, G.G.3
  • 7
    • 0042757082 scopus 로고    scopus 로고
    • Catalogue No.KDP 0001E2, Febr. Hamamatsu Photonic Inc.
    • Photodiodes. Catalogue No.KDP 0001E2, Febr. 94T, p. 26, Hamamatsu Photonic Inc.
    • Photodiodes. , vol.94 T , pp. 26
  • 8
    • 0016497460 scopus 로고
    • Field effect transistor versus analog transistor
    • static induced transistor
    • J.I. Nishizawa, T. Terasaki, J. Shibata, Field effect transistor versus analog transistor (static induced transistor), IEEE Trans. Electron Devices ED-22 (1975) 185-201.
    • (1975) IEEE Trans. Electron Devices , vol.ED-22 , pp. 185-201
    • Nishizawa, J.I.1    Terasaki, T.2    Shibata, J.3
  • 10


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.