Band-gap engineering of a Sech-squared potential in heterojunctions

Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 229, Issue 1, 1997, Pages 49-52

  Tong, B Y ^a   Kiriushcheva, N ^a  

^a UNIVERSITY OF WESTERN ONTARIO   (Canada)

Author keywords

Band gap engineering; GaAs GaA1As; GaAs GaInAs; Multi layered quantum wells; Semiconductor semiconductor heterojunction; Superlattice

Indexed keywords

GALLIUM ARSENIDE; HETEROJUNCTIONS; III-V SEMICONDUCTORS; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; SUPERLATTICES;

BAND GAP ENGINEERING; BAND OFFSETS; GAAS; MULTI-LAYERED; REDUCING NOISE; RESONANCE TUNNELING; SEMICONDUCTOR HETEROJUNCTIONS;

ENERGY GAP;

EID: 0042635303     PISSN: 03759601     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0375-9601(97)00168-0     Document Type: Article

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