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Volumn 234, Issue 2, 1996, Pages 211-217

Indium diffusion inside InBi during and after electrodeposition at various temperatures

Author keywords

Bismuth; Diffusion coefficient; Electrodeposition; In Bi intermetallic compound; Indium

Indexed keywords

ACTIVATION ENERGY; CHARGE TRANSFER; DIFFUSION IN SOLIDS; ELECTRODEPOSITION; INTERMETALLICS; MASS TRANSFER; SOLUTIONS; THERMAL EFFECTS;

EID: 0042628102     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/0925-8388(95)02115-9     Document Type: Article
Times cited : (8)

References (14)
  • 5
    • 0004171729 scopus 로고
    • Academic Press, New York
    • H. Schmalzried, in Solid State Reactions, Academic Press, New York, 1974, pp. 53-66; 95-97; 124-127.
    • (1974) Solid State Reactions , pp. 53-66
    • Schmalzried, H.1
  • 8
    • 0042096146 scopus 로고
    • Thesis, Varanasi
    • H.P. Singh, Thesis, Varanasi, 1972; Scr. Met., 6 (1972) 519.
    • (1972)
    • Singh, H.P.1
  • 9
    • 0041595205 scopus 로고
    • H.P. Singh, Thesis, Varanasi, 1972; Scr. Met., 6 (1972) 519.
    • (1972) Scr. Met. , vol.6 , pp. 519
  • 12
    • 85030000729 scopus 로고    scopus 로고
    • ASTM Card: 32-113, 1990, (InBi)
    • ASTM Card: 32-113, 1990, (InBi)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.