Multiple conduction behavior of BaRuO3 thin film prepared by pulsed laser ablation deposition

Thin Solid Films

Volumn 288, Issue 1-2, 1996, Pages 95-98

  Gu, Mei ^a   Xu, W Ping ^b   Zheng, Lirong ^b   Lin, Chenglu ^b   Cao, Zechun ^a  

^a SHANGHAI UNIVERSITY   (China)

^b SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

Conductivity; Laser ablation; Oxides; Ruthenium

Indexed keywords

BARIUM COMPOUNDS; DEPOSITION; ELECTRIC CONDUCTIVITY MEASUREMENT; EMISSION SPECTROSCOPY; FILM PREPARATION; HALL EFFECT; LASER ABLATION; PULSED LASER APPLICATIONS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

PULSED LASER ABLATION DEPOSITION;

SEMICONDUCTING FILMS;

EID: 0042594276     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0040-6090(96)08802-5     Document Type: Article

References (7)

1. O. Takikava and H. Hiraki, IEEE Proc. Electronic Components Conference, 1986, IEEE, New York, pp. 214.
2. C.B. Eom, Appl. Phys. Lett., 63 (18) (1993) 2570.
3. P.R. Van Loan, Ceram. Bull. Am. Ceram. Soc., 51 (3) (1972) 231.
4. P.C. Donohue, L. Katz and R. Ward, Inorg. Chem., 4 (3) (1965) 306.
5. P.A. Cox, Transition Metal Oxides, Clarendon Press, Oxford, 1992, p. 237.
6. R.E. Newnham, Structure-property relations, Springer Press, 1975.
7. C.E. Rice and W. Robinson, Acta Cryst., B33 (1977) 1342.