On-line Raman analysis of molecular beam epitaxial growth

Journal of Raman Spectroscopy

Volumn 27, Issue 3-4, 1996, Pages 265-270

  Wagner, V ^a,d   Richter, W ^a   Geurts, J ^b   Drews, D ^c   Zahn, D R T ^c  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b RWTH AACHEN UNIVERSITY   (Germany)

^c CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

^d UNIVERSITY OF NAMUR   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY COMPOUNDS; GALLIUM ARSENIDE; INDIUM ANTIMONIDES; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MULTILAYERS; RAMAN SCATTERING; ZINC COMPOUNDS;

CHEMICAL INFORMATION; LAYER THICKNESS; MOLECULAR BEAM EPITAXIAL GROWTH; MULTI-LAYER SYSTEM; MULTILAYER STACKS; ONLINE MONITORING; RAMAN ANALYSIS; RAMAN SCATTERING INTENSITY; REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION; THICKNESS DETERMINATION;

III-V SEMICONDUCTORS;

EID: 0042593311     PISSN: 03770486     EISSN: None     Source Type: Journal    
DOI: 10.1002/(sici)1097-4555(199603)27:3/4<265::aid-jrs963>3.0.co;2-v     Document Type: Article

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