Moore's law at the extremes

Materials Today

Volumn 6, Issue 5, 2003, Pages 28-33

  Marsh, George ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; IMAGING TECHNIQUES; MICROPROCESSOR CHIPS; SPECTRUM ANALYSIS; TRANSISTORS;

IMAGING WAVELENGTH;

PHOTOLITHOGRAPHY;

EID: 0042493320     PISSN: 13697021     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-7021(03)00531-5     Document Type: Article

References (8)

1. Hawryluk, A. M., and Seppala, L. G., J. Vac. Sci. Technol. B (1988) 6 (6), 2162.
2. Silfvast, W. T., and Wood II, O. R., Microelectron. Eng. (1988) 8 (1-2), 3.
3. Kinoshita, H., et al., J. Vac. Sci. Technol. B (1989) 7 (6), 1648.
4. Bjorkholm, J. E., et al., J. Vac. Sci. Technol. B (1990) 8 (6), 1509.
5. Tichenor, D. A., et al., Opt. Lett. (1991) 16 (20), 1557.
6. Nguyen, K. B., et al., In: OSA TOPS on Extreme Ultraviolet Lithography, Kania, D., and Kubiak, G. D., (eds.), Optical Society of America, Washington, (1996), 4.
7. Sweeney, D. W., et al., EUV optical design for a 100 nm CD imaging system. In: Emerging Lithographic Technologies, SPIE, (1998) 3331, 2.
8. Hansson, B. A. M., et al., Liquid-Xenon Jet Laser Plasma Source for EUV Lithography. Proc. SPIE, (2001) 4506.