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Applied Physics Letters
Volumn 49, Issue 19, 1986, Pages 1236-1238
Reaction of titanium with silicon nitride under rapid thermal annealing
(3)
Morgan, A E
a
Broadbent, E K
a
Sadana, D K
a
a
Philips Signetics Company
(
United States
)
Author keywords
[No Author keywords available]
Indexed keywords
EID
:
0042445934
PISSN
:
00036951
EISSN
:
None
Source Type
:
Journal
DOI
:
10.1063/1.97424
Document Type
:
Article
Times cited : (
20
)
References (
7
)
1
84945714736
(1985)
IEEE Trans. Electron Devices
, vol.ED‐32
, pp. 141
Alperin, M.E.
1
Holloway, T.C.
2
Haken, R.A.
3
Gosmeyer, C.D.
4
Karnaugh, R.V.
5
Parmantie, W.D.
6
2
0022298376
(1985)
Technical Digest of International Electron Device Meeting
, pp. 208
Kaneko, H.
1
Koyanagi, M.
2
Shimizu, S.
3
Kubota, Y.
4
Kishino, S.
5
3
0022290450
(1985)
Technical Digest of International Electron Device Meeting
, pp. 590
Tang, T.
1
Wei, C.-C.
2
Haken, R.A.
3
Holloway, T.C.
4
Wan, C.-F.
5
Douglas, M.
6
4
0023006640
(1986)
Mater. Res. Soc. Symp. Proc.
, vol.52
, pp. 279
Morgan, A.E.
1
Broadbent, E.K.
2
Reader, A.H.
3
5
0022147738
(1985)
IEEE Electron Device Lett.
, vol.EDL‐6
, pp. 591
Delfino, M.
1
Broadbent, E.K.
2
Morgan, A.E.
3
Burrow, B.J.
4
Norcott, M.H.
5
6
84950865984
(1986)
J. Vac. Sci. Technol. A
, vol.4
Burrow, B.J.
1
Morgan, A.E.
2
Ellwanger, R.C.
3
7
2242483418
(1984)
J. Vac. Sci. Technol. B
, vol.2
, pp. 781
Beyers, R.
1
Sinclair, R.
2
Thomas, M.E.
3
* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.