Al and Ga diffusion barriers in molecular beam epitaxy

Surface Science

Volumn 298, Issue 2-3, 1993, Pages 384-391

  Dabiran, A M ^a   Nair, S K ^a   He, H D ^a   Chen, K M ^a   Cohen, P I ^a  

^a UNIVERSITY OF MINNESOTA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0042443676     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(93)90052-L     Document Type: Article

References (20)

1. Influence of Substrate Temperature on the Morphology of Al[sub x]Ga[sub 1−x]As Grown by Molecular Beam Epitaxy
2. Investigation of surface roughness of molecular beam epitaxy Ga1−xAlxAs layers and its consequences on GaAs/Ga1−xAlxAs heterostructures
3. Morphology of GaAs and AlxGa1−xAs grown by molecular beam epitaxy
4. Electron spectroscopy of vacuum annealing effects on surfaces of some binary and ternary III–V semiconductors
5. Preferential Desorption of Ga from AlxGa1-xAs Grown by Molecular Beam Epitaxy
6. Summary Abstract: Reflection high energy electron diffraction measurements of AlGaAs growth instabilities and roughening rates on misoriented substrates