Gap-filling of Cu employing sustained self-sputtering with inductively coupled plasma ionization

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 3 SUPPL. B, 1997, Pages 1469-1472

  Ichiki, Takanori ^a   Kikuchi, Toshiaki ^a   Sano, Atsushi ^b   Shingubara, Shoso ^b   Horiike, Yasuhiro ^a  

^a TOYO UNIVERSITY   (Japan)

^b HIROSHIMA UNIVERSITY   (Japan)

Author keywords

Bias sputtering; Copper; Gap filling; ICP; Sustained self sputtering

Indexed keywords

EID: 0042378096     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.1469     Document Type: Article

References (4)

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3. S. Shingubara, A. Sano, I. Utsunomiya, Y. Horiike, Z. J. Radzimski and W. M. Posadowski: Advanced Metallization for ULSI applications 1993, Mat. Res. Soc. Conf. Proc. ULSI-IX (1994) p. 87.
4. W. M. Posadowski and Z. J. Radzimski: J. Vac. Sci. Technol. A 11 (1993) 2980.