300 W XeCl excimer laser annealing and sequential lateral solidification in low temperature poly silicon technology

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5004, Issue , 2003, Pages 69-76

  Herbst, Ludolf ^a   Kahlert, Hans Jürgen ^b   Fechner, Burkhard ^c   Rebhan, Ulrich ^a   Osmanow, Rustem ^a  

^a Lambda Physik GmbH   (Germany)

^b MicroLas Lasersystem GmbH   (Germany)

^c Lambda Physik Japan Co Ltd   (Japan)

Author keywords

High power excimer laser; SLS; TFT annealing; UV light

Indexed keywords

ANNEALING; ELECTRON MOBILITY; EXCIMER LASERS; POLYSILICON; SOLIDIFICATION; THIN FILM TRANSISTORS;

EXCIMER LASER ANNEALING (ELA);

LIQUID CRYSTAL DISPLAYS;

EID: 0042360594     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.476825     Document Type: Conference Paper

References (5)

1. D. Basting et al., "Excimer Laser Technology: laser sources, optics, systems and applications", Lambda Physik AG, pp 125 - 134, 2001
2. I.-J. Chung et al: "Manufacturing Issues for Low Cost TFT-LCD", IDMC 2002 Proceedings, pp 415 - 419, 2002
3. J. Shida et al., "Crystallization of a-Si Films by Excimer Laser Annealing Method", Japan Steel Works Technical Review, 1997
4. James S. Im: "Sequential Lateral Solidification", Phys. Stat. Sol. A 166, 1998, pp. 603
5. H.-J. Kahlert: "Creating Crystals", oe magazine, 11-2001