Spatially resolved deep level transient spectroscopy using a scanning tunneling microscope

Materials Science and Engineering B

Volumn 42, Issue 1-3, 1996, Pages 127-132

  Maeda, K ^a   Uota, M ^a,b   Mera, Y ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b HIGH ENERGY ACCELERATOR RESEARCH ORGANIZATION KEK   (Japan)

Author keywords

Deep level transient spectroscopy; Deep levels; GaAs; High resolution; Non contact; Scanning tunneling microscopy; Surface photovoltage

Indexed keywords

CHARGE CARRIERS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC CONTACTS; LASERS; PLASTIC DEFORMATION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SURFACES;

PHOTOGENERATED CARRIERS; SPATIAL DISTRIBUTION; SURFACE PHOTOVOLTAGE (SPV);

CRYSTALLINE MATERIALS;

EID: 0042355246     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01693-5     Document Type: Article

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