Cathodoluminescence study of the effect of annealing in HgI2 vapor on the defect structure of CdTe

Materials Science and Engineering B

Volumn 42, Issue 1-3, 1996, Pages 277-283

  Panin, G ^a,c   Piqueras, J ^c   Sochinskii, N V ^b,d,e   Dieguez, E ^b  

^a INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS   (Russian Federation)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^c UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

^d UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

^e New Semiconductors   (Ukraine)

Author keywords

Cathodoluminescence; Spectroscopy; Wafer annealing

Indexed keywords

ANNEALING; CATHODOLUMINESCENCE; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; GERMANIUM; IMAGING TECHNIQUES; MERCURY COMPOUNDS; SCANNING ELECTRON MICROSCOPY; SURFACE PHENOMENA; THERMAL EFFECTS; VAPORS;

DEFECT STRUCTURE; LUMINESCENCE EMISSION; RADIATIVE DEFECTS; WAFER ANNEALING;

CADMIUM COMPOUNDS;

EID: 0042355213     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01721-7     Document Type: Article

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