Optoelectronic devices based on para-sexiphenyl films grown by Hot Wall Epitaxy

Synthetic Metals

Volumn 139, Issue 3, 2003, Pages 573-576

  Winder, C ^a   Andreev, A ^a   Sitter, H ^a   Matt, G ^a   Sariciftci, N S ^a   Meissner, D ^a,b  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^b UNIVERSITY OF APPLIED SCIENCES UPPER AUSTRIA   (Austria)

Author keywords

Bi layers; Electroluminescence; Fullerenes; Organic epitaxy; Para sexiphenyl; Solar cells

Indexed keywords

ELECTROLUMINESCENCE; EPITAXIAL GROWTH; FULLERENES; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; SOLAR CELLS; THIN FILMS;

BI-LAYER STRUCTURES;

LIGHT EMITTING DIODES;

EID: 0042329540     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0379-6779(03)00287-X     Document Type: Conference Paper

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