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Key Engineering Materials

Volumn 248, Issue , 2003, Pages 103-106

Basic examination for nodulation-doped (Zn,Mg,Al)O/ZnO

(6) Ryoken, Haruki a Adachi, Yutaka b Sakaguchi, Isao b Ohashi, Naoki b Haneda, Hajime b Takenaka, Tadashi a

a TOKYO UNIVERSITY OF SCIENCE (Japan)

b NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

Author keywords

Al; Bandgap; Mg; Pulsed laser deposition; Zinc oxide

Indexed keywords

ALUMINUM; CARRIER CONCENTRATION; DOPING (ADDITIVES); ENERGY GAP; HARMONIC GENERATION; MAGNESIUM PRINTING PLATES; PULSED LASER DEPOSITION; SAPPHIRE; STRUCTURE (COMPOSITION); THERMAL EFFECTS;

CARRIER INJECTION LAYER; MODULATION DOPED FILMS; MULTILAYERED STRUCTURE;

ZINC OXIDE;

EID: 0042322272 PISSN: 10139826 EISSN: 16629795 Source Type: Book Series
DOI: 10.4028/www.scientific.net/kem.248.103 Document Type: Article

Times cited : (5)

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