Impurity-induced layer disordering of high gap Iny(Al xGa1-x)1-yP heterostructures

Applied Physics Letters

Volumn 52, Issue 17, 1988, Pages 1413-1415

  Deppe, D G ^a   Nam, D W ^a   Holonyak Jr , N ^a   Hsieh, K C ^a   Baker, J E ^a   Kuo, C P ^b   Fletcher, R M ^b   Osentowski, T D ^b   Craford, M G ^b  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^b Product Development Department   (United States)

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EID: 0042279814     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.99132     Document Type: Article

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