MBE-grown heavily Sm-doped ZnTe studied by optical spectroscopy

Materials Science and Engineering B

Volumn 44, Issue 1-3, 1997, Pages 395-399

  Wruck, D ^a   Boyn, R ^a   Parthier, L ^a   Buhrow, T ^a   Henneberger, F ^a  

^a HUMBOLDT UNIVERSITY   (Germany)

Author keywords

Molecular beam epitaxy; Optical spectroscopy; Rare earths; Semiconductors

Indexed keywords

ETCHING; EXCITONS; FABRY-PEROT INTERFEROMETERS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SAMARIUM; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SUBSTRATES; X RAY ANALYSIS;

GLASS PLATELETS; OPTICAL TRANSMISSION SPECTROSCOPY;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0042263977     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0921-5107(96)01783-7     Document Type: Article

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