Poly-Si thin films prepared by plasma-hot wire CVD

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 24, Issue 5, 2003, Pages 499-503

  Liu, Fengzhen ^a   Zhu, Meifang ^a   Feng, Yong ^a   Liu, Jinlong ^a   Wang, Liujiu ^a   Han, Yiqin ^a  

^a UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

Optical properties; Plasma enhanced hot wire chemical vapor deposition (PE HWCVD); Polycrystalline silicon; Thin film structure

Indexed keywords

ABSORPTION; CRYSTALLIZATION; DEPOSITION; PRESSURE; TANTALUM;

CHEMICAL VAPOR DEPOSITION; PLASMA ENHANCED HOT WIRE; POLYCRYSTALLINE SILICON; THIN FILM STRUCTURE;

SEMICONDUCTING SILICON;

EID: 0042262575     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (5)

1. Nakahata K, Kamiya T, Fortmann C M, et al. J. Non-Cryst Solids, 2000, 341: 266
2. Liu F, Zhu M, Feng Y, et al. J. Non-Cryst Solids, 2002, 299-302: 385
3. Ferreira I, Aguas H, Menndens L, et al. Mater Res Soc Symp Proc, 1998, 507: 607
4. Tsu R, Gonzaicz-Hemandcz J, Chao S S, et al. Appl Phys Lett, 1982, 40: 534
5. Zhu M, Guo X, Chen G, et al. Thin Solid Films, 2000, 360, 205