Interface properties between Ni and p-GaN studied by photoemission spectroscopy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 4 B, 2002, Pages 2493-2496

  Hagio, Yoshinori ^a   Sugahara, Hideo ^a   Maruyama, Takahiro ^b   Nanishi, Yasushi ^a   Akimoto, Katsuhiro ^a   Miyajima, Takao ^c   Kijima, Satoru ^c  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b RITSUMEIKAN UNIVERSITY   (Japan)

^c SONY CORPORATION   (Japan)

Author keywords

Annealing; GaN; Island formation; Ohmic contact; Photoemission spectroscopy; Surface cleaning

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; NICKEL; OHMIC CONTACTS; OXIDATION; PHOTOEMISSION;

GAN; ISLAND FORMATION; PHOTOEMISSION SPECTROSCOPY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0042256502     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.41.2493     Document Type: Article

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