-
1
-
-
0027612125
-
Simultaneous operation of ten-channel tunable DFB lasers using strained-InGaAsP multiple quantum wells
-
K. Sato, S. Sekine, Y. Kondo, and M. Yamamoto, "Simultaneous operation of ten-channel tunable DFB lasers using strained-InGaAsP multiple quantum wells," IEEE J. Quantum Electron., vol. 29, pp. 1805-1809, 1993.
-
(1993)
IEEE J. Quantum Electron.
, vol.29
, pp. 1805-1809
-
-
Sato, K.1
Sekine, S.2
Kondo, Y.3
Yamamoto, M.4
-
2
-
-
0027554774
-
Thermal interaction in a distributed-feedback laser diode (DFB LD) array module
-
T. Hayashi, K. Sato, and J. Sekine, "Thermal interaction in a distributed-feedback laser diode (DFB LD) array module," J. Lightwave Technol., vol. 11, pp. 442-447, 1993.
-
(1993)
J. Lightwave Technol.
, vol.11
, pp. 442-447
-
-
Hayashi, T.1
Sato, K.2
Sekine, J.3
-
3
-
-
0029185145
-
Ultralow threshold and uniform operation (1.3±0.09 mA) in 1.3-μm strain-MQW 10-element laser array for parallel high-density optical interconnects
-
K. Uomi, A. Oka, T. Tsunchiya, M. Komori, T. Kawano, and A. Oishi, "Ultralow threshold and uniform operation (1.3±0.09 mA) in 1.3-μm strain-MQW 10-element laser array for parallel high-density optical interconnects," IEEE Photon. Technol. Lett., vol. 7, pp. 1-3, 1995.
-
(1995)
IEEE Photon. Technol. Lett.
, vol.7
, pp. 1-3
-
-
Uomi, K.1
Oka, A.2
Tsunchiya, T.3
Komori, M.4
Kawano, T.5
Oishi, A.6
-
4
-
-
0026922966
-
Low-threshold (3.2 mA per element) 1.3 μm InGaAsP MQW laser array on a p-type substrate
-
S. Yamashita, A. Oka, T. Kawano, T. Tsunchiya, K. Saitoh, K. Uomi, and Y. Ono, "Low-threshold (3.2 mA per element) 1.3 μm InGaAsP MQW laser array on a p-type substrate," IEEE Photon. Technol. Lett., vol. 4, pp. 954-957, 1992.
-
(1992)
IEEE Photon. Technol. Lett.
, vol.4
, pp. 954-957
-
-
Yamashita, S.1
Oka, A.2
Kawano, T.3
Tsunchiya, T.4
Saitoh, K.5
Uomi, K.6
Ono, Y.7
-
5
-
-
0028379805
-
1 - x - yAs/InP strained-layer quantum-well lasers for subscriber loop applications
-
1 - x - yAs/InP strained-layer quantum-well lasers for subscriber loop applications," IEEE J. Quantum Electron., vol. 30, pp. 511-522, 1994.
-
(1994)
IEEE J. Quantum Electron.
, vol.30
, pp. 511-522
-
-
Zah, C.E.1
Bhat, R.2
Pathak, B.N.3
Favire, F.4
Lin, W.5
Wang, M.C.6
Andreadakis, N.C.7
Hwang, D.M.8
Koza, M.A.9
Lee, T.P.10
Wang, Z.11
Darby, D.12
Flanders, D.13
Hsieh, J.J.14
-
6
-
-
0026173629
-
High performance 1.5 μm wavelength InGaAs-InGaAsP strained quantum well lasers and amplifiers
-
P. J. A. Thijs, J. J. M. Binsma, L. F. Tiemeijer, and T. van Dongen, "High performance 1.5 μm wavelength InGaAs-InGaAsP strained quantum well lasers and amplifiers," IEEE J. Quantum Electron., vol. 27, pp. 1426-1439, 1991.
-
(1991)
IEEE J. Quantum Electron.
, vol.27
, pp. 1426-1439
-
-
Thijs, P.J.A.1
Binsma, J.J.M.2
Tiemeijer, L.F.3
Van Dongen, T.4
-
7
-
-
0031649703
-
High-uniform characteristics 12-element 1.5 μm strain-compensated AlGaInAs/InP laser arrays with low threshold current and high characteristic temperature
-
C. C. Lin, K. S. Liu, M. C. Wu, and H. P. Shiao, "High-uniform characteristics 12-element 1.5 μm strain-compensated AlGaInAs/InP laser arrays with low threshold current and high characteristic temperature," Electron. Lett., vol. 34, pp. 186-187, 1998.
-
(1998)
Electron. Lett.
, vol.34
, pp. 186-187
-
-
Lin, C.C.1
Liu, K.S.2
Wu, M.C.3
Shiao, H.P.4
-
8
-
-
0032047045
-
Low crosstalk and highly reliable 12-element 1.3 μm AlGaInAs/InP laser arrays
-
C. C. Lin, K. S. Liu, M. C. Wu, and W. H. Wang, "Low crosstalk and highly reliable 12-element 1.3 μm AlGaInAs/InP laser arrays," Electron. Lett., vol. 34, pp. 776-777, 1998.
-
(1998)
Electron. Lett.
, vol.34
, pp. 776-777
-
-
Lin, C.C.1
Liu, K.S.2
Wu, M.C.3
Wang, W.H.4
-
10
-
-
0343476953
-
Very low threshold current density 1.5 μm GaInAs/AlGaInAs graded-index separate-confinement-heterostructure strained quantum well laser diodes grown by organometallic chemical vapor deposition
-
A. Kasukama, R. Bhat, C. E. Zah, M. A. Koza, and T. P. Lee, "Very low threshold current density 1.5 μm GaInAs/AlGaInAs graded-index separate-confinement-heterostructure strained quantum well laser diodes grown by organometallic chemical vapor deposition," Appl. Phys. Lett., vol. 59, pp. 2486-2488, 1991.
-
(1991)
Appl. Phys. Lett.
, vol.59
, pp. 2486-2488
-
-
Kasukama, A.1
Bhat, R.2
Zah, C.E.3
Koza, M.A.4
Lee, T.P.5
-
11
-
-
0028377803
-
Improved operation characteristics of long-wavelength lasers using strained MQW active layers
-
T. Kamijoh, H. Horikawa, Y. K. Sin, M. Nakajima, C. Q. Xu, and Y. Ogawa, "Improved operation characteristics of long-wavelength lasers using strained MQW active layers," IEEE J. Quantum Electron., vol. 30, pp. 524-532, 1994.
-
(1994)
IEEE J. Quantum Electron.
, vol.30
, pp. 524-532
-
-
Kamijoh, T.1
Horikawa, H.2
Sin, Y.K.3
Nakajima, M.4
Xu, C.Q.5
Ogawa, Y.6
-
12
-
-
0027545803
-
High temperature operation of 1.3 μm GaInAsP/InP GRINSCH strained-layer quantum well lasers
-
T. Namegaya, A. Kasukawa, N. Iwai, and T. Kikuta, "High temperature operation of 1.3 μm GaInAsP/InP GRINSCH strained-layer quantum well lasers," Electron. Lett., vol. 31, pp. 392-393, 1993.
-
(1993)
Electron. Lett.
, vol.31
, pp. 392-393
-
-
Namegaya, T.1
Kasukawa, A.2
Iwai, N.3
Kikuta, T.4
-
13
-
-
0032098862
-
High-temperature operation of 1.3-μm AlGaInAs strained multiple quantum well lasers
-
K. Takemasa, T. Munakata, M. Kobayashi, H. Waka, and J. Kamijoh, "High-temperature operation of 1.3-μm AlGaInAs strained multiple quantum well lasers," Electron. Lett., vol. 34, pp. 1231-1233, 1997.
-
(1997)
Electron. Lett.
, vol.34
, pp. 1231-1233
-
-
Takemasa, K.1
Munakata, T.2
Kobayashi, M.3
Waka, H.4
Kamijoh, J.5
-
14
-
-
0027607231
-
1.57 μm strained-layer quantum-well GaInAlAs ridge-waveguide laser diodes with high temperature (130□) and ultrahigh-speed (17 GHz) performance
-
B. Stegmuller, B. Borchert, and R. Gessner, "1.57 μm strained-layer quantum-well GaInAlAs ridge-waveguide laser diodes with high temperature (130□) and ultrahigh-speed (17 GHz) performance," IEEE Photon. Technol. Lett., vol. 5, pp. 597-599, 1993.
-
(1993)
IEEE Photon. Technol. Lett.
, vol.5
, pp. 597-599
-
-
Stegmuller, B.1
Borchert, B.2
Gessner, R.3
-
15
-
-
0024016902
-
Dispersion penalty for 1.3-μm lightwave systems with multimode semiconductor lasers
-
G. P. Agrawal, P. J. Antony, and T. M. Shen, "Dispersion penalty for 1.3-μm lightwave systems with multimode semiconductor lasers," J. Lightwave Technol., vol. 6, pp. 620-625, 1988.
-
(1988)
J. Lightwave Technol.
, vol.6
, pp. 620-625
-
-
Agrawal, G.P.1
Antony, P.J.2
Shen, T.M.3
-
16
-
-
0022791703
-
Thermal model of laser diode arrays
-
W. Nakwaski, "Thermal model of laser diode arrays," Electron. Lett., vol. 22, pp. 1169-1170, 1986.
-
(1986)
Electron. Lett.
, vol.22
, pp. 1169-1170
-
-
Nakwaski, W.1
-
17
-
-
0026168673
-
Experimental investigation of thermal crosstalk in a distributed feedback laser array
-
K. Sato and M. Murakami, "Experimental investigation of thermal crosstalk in a distributed feedback laser array," IEEE Photon. Technol. Lett., vol. 3, pp. 501-503, 1991.
-
(1991)
IEEE Photon. Technol. Lett.
, vol.3
, pp. 501-503
-
-
Sato, K.1
Murakami, M.2
-
18
-
-
0025387819
-
Crosstalk investigation of laser-diode pairs
-
G. Heise, "Crosstalk investigation of laser-diode pairs," IEEE Photon. Technol. Lett., vol. 2, pp. 97-99, 1990.
-
(1990)
IEEE Photon. Technol. Lett.
, vol.2
, pp. 97-99
-
-
Heise, G.1
-
19
-
-
0038596366
-
1 - y DH laser material
-
1 - y DH laser material," Appl. Phys. Lett., vol. 33, pp. 992-994, 1978.
-
(1978)
Appl. Phys. Lett.
, vol.33
, pp. 992-994
-
-
Johnston W.D., Jr.1
Epps, G.Y.2
Nahory, R.E.3
Pollack, M.A.4
-
20
-
-
0020720899
-
Dark defects in InGaAsP/InP double heterostructure lasers under accelerated aging
-
M. Fukuda, K. Wakita, and G. Iwane, "Dark defects in InGaAsP/InP double heterostructure lasers under accelerated aging," J. Appl. Phys., vol. 54, pp. 1246-1250, 1983.
-
(1983)
J. Appl. Phys.
, vol.54
, pp. 1246-1250
-
-
Fukuda, M.1
Wakita, K.2
Iwane, G.3
-
22
-
-
0347043681
-
Reliability Assurance Practices for Optoelectronic Devices in Loop Applications
-
Bellcore, TA-NWT-000 983, Dec.
-
"Reliability Assurance Practices for Optoelectronic Devices in Loop Applications," Bellcore Technical Advisory, Bellcore, pt. 2, vol. (R)-421, TA-NWT-000 983, Dec. 1993.
-
(1993)
Bellcore Technical Advisory
, vol.R-421
, Issue.2 PART
-
-
-
23
-
-
36549097409
-
0.47As and ρ-InP layers formed by a single metallization common step and rapid thermal processing
-
0.47As and ρ-InP layers formed by a single metallization common step and rapid thermal processing," J. Appl. Phys., vol. 68, pp. 1123-1128, 1990.
-
(1990)
J. Appl. Phys.
, vol.68
, pp. 1123-1128
-
-
Katz, A.1
Weir, B.E.2
Dautremont-Smith, W.C.3
-
24
-
-
0347674387
-
4 plasma deposition for facet coating
-
4 plasma deposition for facet coating," J. Appl. Phys., vol. 50, pp. 3743-3745, 1979.
-
(1979)
J. Appl. Phys.
, vol.50
, pp. 3743-3745
-
-
Namizaki, H.1
Takamiya, S.2
Ishii, M.3
Susaki, W.4
-
25
-
-
0031143287
-
Resistance to external optical feedback of low-chirp strained-quantum-well complex-coupled distributed-feedback laser
-
C. Y. Wang, Z. M. Chuang, H. H. Liao, W. Lin, and C. T. Lee, "Resistance to external optical feedback of low-chirp strained-quantum-well complex-coupled distributed-feedback laser," Jpn. J. Appl. Phys., vol. 36, pp. 2685-2689, 1997.
-
(1997)
Jpn. J. Appl. Phys.
, vol.36
, pp. 2685-2689
-
-
Wang, C.Y.1
Chuang, Z.M.2
Liao, H.H.3
Lin, W.4
Lee, C.T.5
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