Development of a model for gamma-ray spectra generation using pixelated mercuric iodide detectors

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4784, Issue , 2003, Pages 119-127

  Baciak, James E ^a   He, Zhong ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

Compound semiconductor; Gamma ray spectroscopy; Room temperature; Single carrier charge sensing

Indexed keywords

CADMIUM ALLOYS; GAMMA RAY SPECTROMETERS; II-VI SEMICONDUCTORS; MERCURY COMPOUNDS; SEMICONDUCTOR ALLOYS; ULTRAVIOLET SPECTROSCOPY; X RAY DETECTORS; X RAYS; ZINC ALLOYS;

COMPOUND SEMICONDUCTORS; ELECTRON TRANSPORTATION; ELECTRON TRAPPING; ENERGY RESOLUTIONS; GAMMA-RAY SPECTROSCOPY; POSITION SENSITIVE; SINGLE CARRIER; WEIGHTING POTENTIAL;

GAMMA RAYS;

EID: 0042249439     PISSN: 0277786X     EISSN: 1996756X     Source Type: Conference Proceeding    
DOI: 10.1117/12.455979     Document Type: Conference Paper

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