Stress-dependence tight binding study of tellurium-based II-VI semiconductors

Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 315, Issue 1-2, 2003, Pages 143-149

  Merad, A E ^a,b   Kanoun, M B ^a,b   Cibert, J ^b   Aourag, H ^c   Merad, G ^a  

^a UNIVERSITY OF TLEMCEN   (Algeria)

^b LIPHY   (France)

^c UNIVERSITÉ DE TECHNOLOGIE DE BELFORT MONTBÉLIARD   (France)

Author keywords

CdTe; Deformation potential constants; Electronic structure; Tight binding method; ZnTe

Indexed keywords

CADMIUM TELLURIDE; DEFORMATION; ELECTRONIC STRUCTURE; ENERGY GAP; EQUATIONS OF STATE; HYDRAULICS; HYDROSTATIC PRESSURE; II-VI SEMICONDUCTORS; PRESSURE EFFECTS; ZINC COMPOUNDS;

CDTE; DEFORMATION POTENTIAL; DIRECT BAND GAP; MURNAGHAN'S EQUATION; NONLINEAR PRESSURE; STRESS DEPENDENCE; TIGHT BINDING METHODS; ZNTE;

WIDE BAND GAP SEMICONDUCTORS;

CADMIUM DERIVATIVE; TELLURIUM; ZINC;

ARTICLE; BINDING AFFINITY; CHEMICAL INTERACTION; ELECTRONICS; HYDROSTATIC PRESSURE; LAW; NONLINEAR SYSTEM; QUANTUM MECHANICS; SEMICONDUCTOR; STRESS;

EID: 0042234069     PISSN: 03759601     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0375-9601(03)00974-5     Document Type: Article

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