Current induced avalanche in epitaxial structures

IEEE Transactions on Nuclear Science

Volumn 32, Issue 6, 1985, Pages 3991-3995

  Smith, A J ^b   Coppage, F N ^a   Hash, G L ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b KTECH CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0042230699     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1985.4334056     Document Type: Article

References (7)

1. T. F. Wrobel and J. L. Azarewicz, “High Dose Rate Burnout in Silicon Epitaxial Transistors,” IEEE Trans. Nucl. Sci., Vol. NS-27, pp. 1411–1415 (1980).
2. T. F. Wrobel and J. L. Azarewicz, “High Dose Rate Burnout,” IRT Corporation, Report No. INTEL-RT-8025-480 8025–480 (1974).
3. S. K. Ghandhi, Semiconductor Devices, (John Wiley and Sons, New York, 1977).
4. R. J. Whittier and D. A. Tremere, “Current Gain and Cutoff Frequency Falloff at High Currents,” IEEE Trans. Electron Devices, Vol. ED-16, No. 1, pp. 39–57 57 (1969).
5. S. M. Sze, Physics of Semiconductor Devices, (John Wiley and Sons, New York, 1981).
6. A. J. Smith, unpublished data.
7. J. L. Azarewicz and R. Berger, “Combined Environment Effects in Semiconductor Devices,” Jaycor, Report No. DNA-TR-81-339 (1983).