Thin film diamond metal-insulator field effect transistor for high temperature applications

Materials Science and Engineering B

Volumn 46, Issue 1-3, 1997, Pages 124-128

  Pang, Lisa Y S ^a   Chan, Simon S M ^a   Chalker, Paul R ^b   Johnston, Colin ^b   Jackman, Richard B ^a  

^a UNIVERSITY COLLEGE LONDON   (United Kingdom)

^b RICARDO UK LTD   (United Kingdom)

Author keywords

Ohmic region; Pinch off; Schottky barrier

Indexed keywords

BORON; DIAMOND FILMS; HIGH TEMPERATURE APPLICATIONS; LEAKAGE CURRENTS; OHMIC CONTACTS; POLYCRYSTALLINE MATERIALS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; THIN FILM DEVICES; TRANSCONDUCTANCE;

PINCH OFF;

MISFET DEVICES;

EID: 0042226023     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01946-0     Document Type: Article

References (19)

1. G.S. Gildenblat, S.A. Grot and A. Badzian, Proc. IEEE, 79 (1991) 647.
2. Sze, Physics of Semiconductor Devices, 2nd edn, Wiley.
3. W. Tsai, M. Delfino, D. Hodul, M. Riazat, L.Y. Ching, G. Reynolds and C.B. Cooper, JEEE Electron. Dev. Lett., 12 (1991) 157.
4. N. Fujimori and Y. Nishibayashi, Diamond Rel. Mater., 1 (1992) 665.
5. K. Nishimura, K. Kumagai, R. Nakamura and K. Kobashi, J. Appl. Phys., 75 (1994) 8142.
6. A.J. Tessmer, L.S. Plano and D.L. Dreifus, IEEE Electron. Dev. Lett., 14 (1993) 66.
7. B.R. Stoner, D.M. Malta, A.J. Tessmer, J. Holmes, D.L. Dreifus, R.C. Glass, A. Sowers and R.J. Nemanich, SPIE, 2151 (1994) 2.
8. S.A. Grot, G.S. Gildenblat, C.W. Hatfield and A.R. Badzian, IEEE Electron. Dev. Lett., 13 (1992) 462.
9. B.A. Fox, M.L. Hartsell, D.M. Malta, H.A. Wynands, C.-T. Kao, L.S. Plano, G.J. Tessmer, R.B. Hernand, J.S. Holmes, A.J. Tessmer and D.L. Dreifus, Diamond Rel. Mater., 4 (1995) 622.
10. C.R. Zeisse, C.A. Hewett, R. Nguyen, J.R. Zeidler and R.G. Wilson, IEEE Electron. Dev. Lett., 12 (1992) 602.
11. C. Johnston, C.F. Ayres and P.R. Chalker, J. Physique IV, 1 (1991) C2-915.
12. P. Bou and L. Vandenbulcke, J. Electrochem. Soc., 10 (1991) 2991.
13. B. Baral, S.S.M. Chan and R.B. Jackman, J. Vac. Sci. Technol., A14 (1996) (In Press)
14. V. Venkatesan and K. Das, IEEE Electron. Dev. Lett., 13 (1992) 126-128.
15. R.D. McKeag, S.S.M. Chan, C. Johnston, P.R. Chalker and R.B. Jackman, Mater. Sci. Eng., B29, 223 (1995).
16. K. Miyata, K. Nishimura and K. Kobashi, IEEE Trans. Electron. Dev., 42 (1995) 2010-.
17. A.V. Denisenko, A.A. Melnikov, A.M. Zaitsev, V.I. Kurganskii, A.J. Shilov, Ju.P. Gorban and V.S. Varichenko, Mater. Sci. Eng., B11 (1992) 273.
18. Y. Matsumae, Y. Akiba, Y. Hirose, T. Kurosu and M. Iida, Jpn. J. Appl. Phys., 33 (1994) L702.
19. A.J. Tessmer, L.S. Plano and D.L. Dreifus, IEEE Electron. Dev. Lett., 14 (1993) 66.