Capacitance-voltage measurements on metal-SiO2-boron-doped homoepitaxial diamond

Diamond and Related Materials

Volumn 6, Issue 5-7, 1997, Pages 852-855

  Inushima, T ^a   Nakama, T ^a   Shiraishi, T ^a   Mitsuhashi, M ^b   Watanabe, T ^b  

^a TOKAI UNIVERSITY   (Japan)

^b KANAGAWA ACADEMY OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

Band structure; Electrical properties; Homoepitaxy; Impurities

Indexed keywords

EID: 0042224642     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0925-9635(96)00723-6     Document Type: Article

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