Light induced changes in the optical properties of thin As - S - Ge(Bi, Tl) films

Journal of Optoelectronics and Advanced Materials

Volumn 3, Issue 2, 2001, Pages 311-317

  Todorov, R ^a   Petkov, K ^a  

^a CENTRAL LABORATORY OF PHOTOPROCESSES   (Bulgaria)

Author keywords

Optical constants; Photostructural changes; Thin chalcogenide films

Indexed keywords

ARSENIC COMPOUNDS; CHALCOGENIDES; ENERGY GAP; GERMANIUM; GERMANIUM COMPOUNDS; OPTICAL BAND GAPS; OPTICAL CONSTANTS; OPTICAL GLASS; PHOTOBLEACHING; REFRACTIVE INDEX; SUBSTRATES; THICK FILMS; VACUUM EVAPORATION;

ABSORPTION CO-EFFICIENT; ABSORPTION EDGES; AS-DEPOSITED FILMS; CHALCOGENIDE FILMS; ELLIPSOMETRIC MEASUREMENTS; LIGHT-INDUCED CHANGES; PHOTOSTRUCTURAL CHANGES; VACUUM DEPOSITED FILMS;

LIGHT TRANSMISSION;

EID: 0042218346     PISSN: 14544164     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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