Initial stage growth and interface formation of Al on Si(001)2 x 1

Surface Science

Volumn 365, Issue 2, 1996, Pages 328-336

  Yeom, H W ^a,b   Abukawa, T ^a   Takakuwa, Y ^a   Nakamura, M ^a   Kimura, M ^a   Kakizaki, A ^a,b   Kono, S ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

Adatoms; Aluminum; Chemisorption; Low index single crystal surfaces; Metal semiconductor interfaces; Silicon; Soft X ray photoelectron spectroscopy; Surface chemical reaction

Indexed keywords

ADSORPTION; ALUMINUM; ANNEALING; BAND STRUCTURE; ELECTRONIC STRUCTURE; GROWTH (MATERIALS); INTERFACES (MATERIALS); LOW ENERGY ELECTRON DIFFRACTION; PHOTOELECTRON SPECTROSCOPY; SURFACE STRUCTURE; SYNCHROTRON RADIATION; THERMAL EFFECTS;

CORE LEVEL PHOTOELECTRON SPECTROSCOPY; DIMER; INITIAL STAGE GROWTH; INTERFACIAL REACTION; VALENCE BAND PHOTOELECTRON SPECTROSCOPY;

SILICON;

EID: 0042094603     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00740-6     Document Type: Article

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